vishay siliconix SIS322DNT new product document number: 63569 s12-2185-rev. a, 10-sep-12 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com n-channel 30 v (d-s) mosfet features ? trenchfet ? gen iv power mosfet ?100 % r g and uis tested ? thin 0.75 mm height ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? switch mode power supplies ? personal computers and servers ? telecom bricks ? vrm?s and pol notes: a. surface mounted on 1" x 1" fr4 board. b. t = 10 s. c. see solder profile ( www.vishay.com/doc?73257 ). the thin powerpak 1212-8 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the si ngulation process in manufacturing. a sol der fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. d. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. e. maximum under steady state conditions is 81 c/w. f. based on t c = 25 c. product summary v ds (v) r ds(on) ( ? ) (max.) i d (a) f q g (typ.) 30 0.0075 at v gs = 10 v 38.3 6.9 nc 0.0120 at v gs = 4.5 v 30.2 orderin g information: sis322d n t-t1-ge3 (lead (p b )-free and halogen-free) 1 2 3 4 5 6 7 8 s s s g d d d d 3.30 mm 3.30 mm thin powerpak ? 1212-8 bottom v ie w 0.75 mm n-channel mosfet g d s absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs + 20, - 16 continuous drain current (t j = 150 c) t c = 25 c i d 38.3 a t c = 70 c 30.6 t a = 25 c 15.3 a, b t a = 70 c 12.1 a, b pulsed drain current (t = 300 s) i dm 70 continuous source-drain diode current t c = 25 c i s 18 t a = 25 c 2.9 a, b single pulse avalanche current l = 0.1 mh i as 10 single pulse avalanche energy e as 5 mj maximum power dissipation t c = 25 c p d 19.8 w t c = 70 c 12.7 t a = 25 c 3.2 a, b t a = 70 c 3 a, b operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) c, d 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, e t ? 10 s r thja 31 39 c/w maximum junction-to-case (drain) steady state r thjc 56.3
www.vishay.com 2 document number: 63569 s12-2185-rev. a, 10-sep-12 vishay siliconix SIS322DNT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 % b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 30 v v ds temperature coefficient ? v ds /t j i d = 250 a 18.5 mv/c v gs(th) temperature coefficient ? v gs(th) /t j - 5.2 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.2 2.4 v gate-source leakage i gss v ds = 0 v, v gs = + 20 v, - 16 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds ?? 5 v, v gs = 10 v 30 a drain-source on-state resistance a r ds(on) v gs ?? 10 v, i d = 10 a 0.0060 0.0075 ? v gs ?? 4.5 v, i d = 8 a 0.0096 0.0120 forward transconductance a g fs v ds = 15 v, i d = 10 a 54 s dynamic b input capacitance c iss v ds = 15 v, v gs = 0 v, f = 1 mhz 1000 pf output capacitance c oss 287 reverse transfer capacitance c rss 34 c rss /c iss ratio 0.034 0.068 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 10 a 14.3 21.5 nc v ds = 15 v, v gs = 4.5 v, i d = 10 a 6.9 10.5 gate-source charge q gs 2.8 gate-drain charge q gd 1.6 output charge q oss v ds = 15 v, v gs = 0 v 7.8 gate resistance r g f = 1 mhz 0.4 1.6 3.2 ? tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 4.5 v, r g = 1 ? 15 30 ns rise time t r 10 20 turn-off delay time t d(off) 15 30 fall time t f 714 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 10 v, r g = 1 ? 11 22 rise time t r 918 turn-off delay time t d(off) 15 30 fall time t f 510 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 18 a pulse diode forward current i sm 70 body diode voltage v sd i s = 5 a, v gs ?? 0 v 0.77 1.1 v body diode reverse recovery time t rr i f = 10 a, di/dt = 100 a/s, t j = 25 c 19 35 ns body diode reverse recovery charge q rr 714nc reverse recovery fall time t a 10 ns reverse recovery rise time t b 9
document number: 63569 s12-2185-rev. a, 10-sep-12 www.vishay.com 3 vishay siliconix SIS322DNT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current and gate voltage gate charge 0 14 28 42 56 70 0.0 0.5 1.0 1.5 2.0 2.5 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 3 v v gs = 10 v thru 4v v gs = 2 v 0.000 0.004 0.008 0.012 0.016 0.020 0 14 28 42 56 70 r ds(on) - on-resistance () i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 3 6 9 12 15 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 15 v v ds = 20 v v ds = 10 v i d = 10 a transfer characteristics capacitance on-resistance vs. junction temperature 0 11 22 33 44 55 0 1 2 3 4 5 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 240 480 720 960 1200 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on-resistance (normalized) t j - junction temperature ( c) i d = 10 a v gs = 10 v v gs = 4.5 v
www.vishay.com 4 document number: 63569 s12-2185-rev. a, 10-sep-12 vishay siliconix SIS322DNT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 0.001 0.01 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 1.5 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 v gs(th) variance (v) t j - temperature ( c) i d = 250 a i d = 5 ma on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.000 0.006 0.012 0.018 0.024 0.030 0246810 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 10 a 0 10 20 30 40 50 0.001 0.01 0.1 1 10 power (w) time (s) safe operating area, junction-to-ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified 100 s 100 ms limited by r ds(on) * 1 ms i dm limited t a = 25 c single pulse bvdss limited 10 ms 10 s 1 s dc i d limited
document number: 63569 s12-2185-rev. a, 10-sep-12 www.vishay.com 5 vishay siliconix SIS322DNT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max.) = 150 c, using junction-to-cas e thermal resistance, and is mo re useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0 9 18 27 36 45 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) power, junction-to-case 0 5 10 15 20 25 0255075100125150 power (w) t c - case temperature ( c) power, junction-to-ambient 0.0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 power (w) t a - ambient temperature ( c)
www.vishay.com 6 document number: 63569 s12-2185-rev. a, 10-sep-12 vishay siliconix SIS322DNT new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63569 . normalized thermal transient im pedance, junction-to-ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja = 81 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted normalized thermal transient impedance, junction-to-case 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse
package information www.vishay.com vishay siliconix revison: 18-feb-13 1 document number: 62836 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpak ? 1212-8t millimeters inches dim. min. nom. max. min. nom. max. a 0.70 0.75 0.80 0.028 0.030 0.031 a1 0.00 - 0.05 0.000 - 0.002 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 d 3.20 3.30 3.40 0.126 0.130 0.134 d1 2.95 3.05 3.15 0.116 0.120 0.124 d2 1.98 2.11 2.24 0.078 0.083 0.088 d3 0.48 - 0.89 0.019 - 0.035 d4 0.47 typ. 0.0185 typ. d5 2.3 typ. 0.090 typ. e 3.20 3.30 3.40 0.126 0.130 0.134 e1 2.95 3.05 3.15 0.116 0.120 0.124 e2 1.47 1.60 1.73 0.058 0.063 0.068 e3 1.75 1.85 1.98 0.069 0.073 0.078 e4 0.34 typ. 0.013 typ. e 0.65 bsc 0.026 bsc k 0.86 typ. 0.034 typ. k1 0.35 - - 0.014 - - h 0.30 0.41 0.51 0.012 0.016 0.020 l 0.30 0.43 0.56 0.012 0.017 0.022 l1 0.06 0.13 0.20 0.002 0.005 0.008 ? 0 - 12 0 - 12 w 0.15 0.25 0.36 0.006 0.010 0.014 m 0.125 typ. 0.005 typ. ecn: t13-0056-rev. a, 18-feb-13 dwg: 6012
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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